MOSFET snapback sustaining and breakover ...

下面我们继续从寄生三极管的电性来探讨栓锁效应(Latch-up)发生的条件，有助于我们理解如何降低栅锁效应，或者如何实时触发栅锁效应来达到ESD保护的作用。

The device behavior is determined by the MOSFET before snapback and the parasitic BJT dominates after snapback. The substrate current results mainly from ...

Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the ...

由 Y Fong 著作 · 1990 · 被引用 23 次 — Abstract-The high-current snapback characteristics of MOSFET's with different channel lengths and widths, gate oxide thicknesses, and.

由 P Singh 著作 · 2020 — Abstract. This work models high current snapback behavior in n-FET transistors with bottom body contact under high current stress at the ...

2019年1月5日 — Snapback ESD protection devices behave differently. The typical MOSFET has a parasitic bipolar junction transistor which has a source as its ...

Here, we use a simple apparatus that brings two macroscopic surfaces into repeated contact and measures the charge on the surfaces after each contact. We vary ...

由 T Skotnicki 著作 · 1992 · 被引用 8 次 — The paper analyzes the phenomenon of snapback (negative resistance region of the output characteristic) in MOSFETs. It shows that the expansion of the base ...